Ion-beam-induced-current (IBIC) monitoring of uniform and selective ion-etching processes in layered structures

Publisher Website
Google Scholar
Abstract
Electrical current induced in a sample during ion-etching processes is found to depend sensitively on constituent materials of the sample surfaces. This induced current (IBIC), when measured as a function of etching time, is shown to exhibit a step-like change whenever a new interface is reached in the etching process of layered structures. Consequently, the IBIC measurement provides a new powerful real-time method to monitor the evolution of etched-surface profiles; this simple method is successfully applied to optimize the fabrication process of highly-efficient gold gratings with the periodicity of 0.26 μm.

This publication has 0 references indexed in Scilit: