High-efficient class F GaAs FET amplifiers operating with very low bias voltages for use in mobile telephones at 1.75 GHz
- 1 August 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 3 (8) , 268-270
- https://doi.org/10.1109/75.242219
Abstract
High-efficiency class F GaAs power FET amplifiers working with a very low drain bias voltage of 3 V, for use in portable telephones, are reported. The transistor used has an optimized gate periphery of 2000 mm and a gate length of 0.7 mu m. Under class F operation with a drain voltage of 3 V, it has demonstrated an output power of 24.5 dBm with 71% of power-added efficiency at the operating frequency of 1.75 GHz. Output harmonic levels lower than -25 dBc have been measured. The results obtained present the state of the art as published for low-bias-voltage, low-power-consumption amplifiers for mobile telephone systems.Keywords
This publication has 4 references indexed in Scilit:
- A 3.5 watt high efficiency GaAs FET amplifier for digital telephone communicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- X-band 0.5, 1, and 2 watt power amplifiers with marked improvement in power-added efficiencyIEEE Transactions on Microwave Theory and Techniques, 1990
- Class-B power MMIC amplifiers with 70 percent power-added efficiencyIEEE Transactions on Microwave Theory and Techniques, 1989
- A theoretical analysis and experimental confirmation of the optimally loaded and overdriven RF power amplifierIEEE Transactions on Electron Devices, 1967