X-ray attenuation of silicon in the energy range 25-50 keV
- 20 September 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (26) , 5215-5223
- https://doi.org/10.1088/0022-3719/18/26/029
Abstract
Precise measurements of the X-ray attenuation coefficient of crystalline silicon have been made in the energy range 25 to 50 keV. The results are compared with theoretical predictions and earlier measurements. A systematic discrepancy between theory and experiment is observed. The most likely cause of the disagreement is thought to be the uncertainty in the estimation of the thermal diffuse scattering cross section.Keywords
This publication has 8 references indexed in Scilit:
- Relativistic atomic form factors and photon coherent scattering cross sectionsJournal of Physical and Chemical Reference Data, 1979
- Electron-density studies. III. A re-evaluation of the electron distribution in crystalline siliconActa Crystallographica Section A, 1978
- X-Ray Attenuation in Silicon and Germanium in the Energy Range 25 to 50 keVZeitschrift für Naturforschung A, 1977
- Attenuation Coefficients of Various Body Tissues, Fluids, and Lesions at Photon Energies of 18 to 136 keVRadiology, 1975
- Atomic form factors, incoherent scattering functions, and photon scattering cross sectionsJournal of Physical and Chemical Reference Data, 1975
- Atomic Photoelectric Effect Above 10 keVReviews of Modern Physics, 1973
- Effect of Scattering on the Attenuation of X RaysPhysical Review B, 1971
- Results of the IUCr precision lattice-parameter projectActa Crystallographica, 1960