Noise spectroscopy, diagnostics, and reliability of electronic devices

1 January 1993

proceedings article
Published by AIP Publishing in AIP Conference Proceedings

Vol. 285 (1) , 206-211
https://doi.org/10.1063/1.44575

Abstract

Application of low frequency (LF) noise analysis to defect characterization, diagnostic, and reliability of electronic devices is based on the evaluation of the G‐R and 1/f noise. After some remarks on the parameters shifts induced by non‐stationary processes, specific examples on electromigration, p‐n junction devices, and FET’s are detailed.

Keywords

STATIONARY PROCESS
SEMICONDUCTOR DEVICES
LOW FREQUENCY
ELECTROMIGRATION

This publication has 0 references indexed in Scilit: