Abstract
In a conventional bipolar transistor the current is limited by diffusion in the neutral base region. In the bulk-barrier transistor the current is determined by diffusion or thermionic emission over a potential barrier. This type of operation occurs in bipolar transistors if the width of the neutral base is below a definite value. The limit between bipolar- and bulk-barrier mode is defined. The current voltage-characteristic as well as the small signal equivalent circuit are given.

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