Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN
- 1 September 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (9B) , L1178-1179
- https://doi.org/10.1143/jjap.34.l1178
Abstract
The electron effective mass in hexagonal GaN films grown by metal organic vapor phase epitaxy on sapphire substrates is determined by cyclotron resonance experiments. Its value is m p * = 0.22±0.005 m o. Taking polaron effects into account the band edge mass is m b * = 0.20±0.005 m o. From the resonance linewidth a mobility of 3500 cm2/V·s at 6 K is obtained.Keywords
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