Analysis Of Franz-Keldysh Electro-Optic Modulation In InP, GaAs, GaSb, InAs, And InSb

1 January 1987

proceedings article
Published by SPIE-Intl Soc Optical Eng

p. 158-168
https://doi.org/10.1117/12.967524

Abstract

Effective mass theory and zero-field absorption data are used to calculate electric-field-induced changes in optical refraction and absorption (the Franz-Keldysh effect) for five direct gap III-V semiconductors: InP, GaAs, GaSb, InAs, and InSb. Results are given for fields of 10⁴ V/cm to the estimated breakdown strength and for photon energies of 40 and 80 meV below the band gap for each semiconductor.

Keywords

INDIUM ARSENIDE
MODULATION
GALLIUM ANTIMONIDE
GALLIUM ARSENIDE
ABSORPTION
GROUP III-V SEMICONDUCTORS
PHOTONS
REFRACTION
SEMICONDUCTORS

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