Negative light-modulation effect of boron-doped hydrogenated amorphous silicon

Publisher Website
Google Scholar
Abstract
Laser intensity dependence of transmission and the light-modulation effect of boron-doped hydrogenated amorphous silicon (a-Si:H) were investigated with 780 nm laser diodes. Negative intensity dependence, which causes the transmission to decrease as the laser intensity is increased, was observed for B-doped, but not for undoped a-Si:H. Moreover, a negative light-modulation effect was discovered where the constant signal light decreases with increasing control light. To explain these phenomena, a double-absorption model, which has two absorption processes from a level associated with the impurity and from a valence band, was considered.