Etching characteristics in helicon wave plasma
- 1 February 1993
- journal article
- Published by IOP Publishing in Plasma Sources Science and Technology
- Vol. 2 (1) , 11-13
- https://doi.org/10.1088/0963-0252/2/1/003
Abstract
The Si etching characteristic in helicon wave plasma was studied. The Si etch rate showed a very critical pressure dependence. Low-temperature etching at liquid-nitrogen temperature offered directional etching with a rate of 3500 AA min-1. The etching uniformity was also studied on the two points of the magnetic field and the tube diameter.Keywords
This publication has 4 references indexed in Scilit:
- Helicon waves and efficient plasma productionPhysics of Fluids B: Plasma Physics, 1991
- The application of the helicon source to plasma processingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- RF production of high density plasmas for acceleratorsLaser and Particle Beams, 1989
- Microwave Plasma EtchingJapanese Journal of Applied Physics, 1977