Ultraviolet photochemical nitridation of GaAs
- 28 December 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (26) , 3175-3177
- https://doi.org/10.1063/1.107950
Abstract
Monolayer nitridation of Ga‐rich GaAs(100) is achieved at 100 K by simultaneous exposure to ammonia and 6.4 eV photons in a vacuum environment. This process is a result of nonthermal photodissociation of adsorbed ammonia. Surface NH2 is identified as an important intermediate in nitridation.Keywords
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