A planar-processed PI-FET accelerometer

• 1 January 1980
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 848-849
• https://doi.org/10.1109/iedm.1980.189980

Abstract

Keywords

• ACCELEROMETERS
• ETCHING
• ZINC OXIDE
• SIGNAL DESIGN
• LABORATORIES
• CAPACITIVE SENSORS
• SILICON
• ANISOTROPIC MAGNETORESISTANCE
• MOSFETS
• VOLTAGE