Visible and infrared (1.54 μm) emission from Er-lmplanted porous Si for photonic applications
- 1 January 1996
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (1) , 43-49
- https://doi.org/10.1007/bf02666172
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Electrically Pumped Rare Earth Doped Semiconductor LasersMRS Proceedings, 1993
- Optical Activation of Ion Implanted Rare-EarthsMRS Proceedings, 1993
- Silicon Nanostructures in Si-Based Light-Emithing DevicesMRS Proceedings, 1993
- Visible electroluminescence from porous silicon np heterojunction diodesApplied Physics Letters, 1992
- Visible electroluminescence from porous siliconApplied Physics Letters, 1992
- Theory of Porous Silicon Injection ElectroluminescenceMRS Proceedings, 1992
- Electroluminescence in the visible range during anodic oxidation of porous silicon filmsApplied Physics Letters, 1991
- Visible Electroluminescence of Porous Silicon Devices with a Solid State ContactMRS Proceedings, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- 1.54-μm luminescence of erbium-implanted III-V semiconductors and siliconApplied Physics Letters, 1983