Transport in carbon nanotube p-i-n diodes
- 16 October 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (16)
- https://doi.org/10.1063/1.2360895
Abstract
Single-walled carbon nanotube diodes are fabricated in a split-gate geometry with electron (n) and hole (p) regions separated by a central region. With the central region gated p or n type the diodes “leak” at low voltages, likely due to tunneling across the smaller depletion region. With the central region intrinsic, nearly ideal diode behavior is observed. Comparison to theory for a one-dimensional diode yields the band gap of the tube and the transmission coefficient through the junction. In reverse bias, the breakdown voltage depends weakly on temperature and nanotube diameter. Comparisons are made to predictions for Zener tunneling and avalanche breakdown.Keywords
This publication has 14 references indexed in Scilit:
- Band Structure, Phonon Scattering, and the Performance Limit of Single-Walled Carbon Nanotube TransistorsPhysical Review Letters, 2005
- Photovoltaic effect in ideal carbon nanotube diodesApplied Physics Letters, 2005
- Mobile Ambipolar Domain in Carbon-Nanotube Infrared EmittersPhysical Review Letters, 2004
- Carbon nanotube p-n junction diodesApplied Physics Letters, 2004
- Electron-hole symmetry in a semiconducting carbon nanotube quantum dotNature, 2004
- Determination of electron orbital magnetic moments in carbon nanotubesNature, 2004
- Tuning Carbon Nanotube Band Gaps with StrainPhysical Review Letters, 2003
- Hysteresis Caused by Water Molecules in Carbon Nanotube Field-Effect TransistorsNano Letters, 2003
- Schottky Barriers in Carbon Nanotube HeterojunctionsPhysical Review Letters, 2000
- Novel Length Scales in Nanotube DevicesPhysical Review Letters, 1999