Measurements of the Stark broadening parameters of several Si II lines
- 1 July 1970
- journal article
- Published by IOP Publishing in Journal of Physics B: Atomic and Molecular Physics
- Vol. 3 (7) , 999-1003
- https://doi.org/10.1088/0022-3700/3/7/014
Abstract
Halfwidths of several Stark broadened silicon II lines have been measured in an argon plasma behind the reflected shock wave. The plasma was produced in an electromagnetically driven T tube and the silicon was present as an impurity. The electron density was determined by the laser interferometry at two different wavelengths, while the electron temperature was measured from relative intensities of Ar II lines. The measured Si II linewidths compare well with the theory.Keywords
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