MMIC amplifier chip sets for Ka-band communications applications

Abstract
A family of five PHEMT 0.4-0.5 W driver chips and four 1-1.5 W power amplifier chips spanning 28-40 GHz has been developed. A robust 0.25 /spl mu/m T-gate technology enables the constituent 500 /spl mu/m PHEMT cells to consistently achieve yields >70% and power added efficiency >35%. The demonstrated high yield and resulting low cost of these MMICs makes them attractive building blocks for today's millimeter-wave communications systems.

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