Valence transition in TmSe 1−x Te x : From semiconductor gap to hybridization gap
- 1 January 1987
- journal article
- Published by Elsevier in Journal of Magnetism and Magnetic Materials
- Vol. 63-64, 606-608
- https://doi.org/10.1016/0304-8853(87)90680-9
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Nonlinear pressure dependence of the bulk modulus of TmSePhysical Review B, 1986
- The semiconductor-metal transition in Tm-compoundsJournal of Magnetism and Magnetic Materials, 1985
- Low-temperature pressure variations in a self-clamping pressure cellReview of Scientific Instruments, 1984
- Inelastic light scattering in semiconducting TmSe1−xTex: Strong f-d mixingSolid State Communications, 1983
- Valence changes in TmSe by alloying with TmTe and EuSePhysical Review B, 1981
- Pressure Study of the Metal-Insulator Transition in TmSePhysical Review Letters, 1980
- Low temperature properties of TmSe with varying chemical compositionPhysics Letters A, 1977