Atomic constraint in hydrogenated ‘‘diamond-like’’ carbon
- 11 February 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (6) , 592-594
- https://doi.org/10.1063/1.104597
Abstract
Carbon bonding environments (measured by nuclear magnetic resonance spectroscopy) and compressive stress in plasma‐deposited hydrogenated diamond‐like carbon (DLC) films have been examined systematically as a function of substrate bias voltage. These results are related in terms of random network theory to show that hard DLC formed in an intermediate voltage range (100–400 V) consists of small graphitic clusters linked in a random network which is stiffened by a high density of quaternary carbon.Keywords
This publication has 12 references indexed in Scilit:
- The hardness and Young’s modulus of amorphous hydrogenated carbon and silicon films measured with an ultralow load indenterJournal of Applied Physics, 1989
- The deposition and study of hard carbon filmsJournal of Applied Physics, 1989
- Subplantation model for film growth from hyperthermal species: Application to diamondPhysical Review Letters, 1989
- Correlation of the optical gaps and Raman spectra of hydrogenated amorphous carbon filmsApplied Physics Letters, 1989
- Low-Pressure, Metastable Growth of Diamond and "Diamondlike" PhasesScience, 1988
- Growth of Thin Chemically Bonded Diamondlike Films by Ion Beam DepositionScience, 1988
- Amorphous carbonAdvances in Physics, 1986
- Characterization of amorphous carbon-hydrogen films by solid-state nuclear magnetic resonanceApplied Physics Letters, 1985
- Constraint theory, vector percolation and glass formationSolid State Communications, 1985
- Continuous deformations in random networksJournal of Non-Crystalline Solids, 1983