Microwave gain from an n -channel enhancement-mode InP m.i.s.f.e.t.

30 August 1979

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 15 (18) , 578
https://doi.org/10.1049/el:19790415

Abstract

A power gain of 14 dB at 1 GHz has been demonstrated in an enhancement-mode m.i.s.f.e.t. constructed on an Fe-doped semi-insulating InP substrate. The same device also exhibits well behaved gain characteristics at low frequencies.

Keywords

14 DB POWER GAIN
N-CHANNEL ENHANCEMENT MODE MISFET
LOW FREQUENCIES
MICROWAVE GAIN
GAIN CHARACTERISTICS
1 GHZ