Carrier relaxation in InGaAs heterostructures
- 19 September 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (12) , 1486-1488
- https://doi.org/10.1063/1.112020
Abstract
We present time-resolved measurements of carrier dynamics in bulk and quantum wells InGaAs, using differential absorption spectroscopy. We find that the carrier thermalization time is 200–300 fs regardless of layer width for sample thickness ranging from 100 to 6000 Å. The efficiency of screening relative to phase space filling is larger in the bulk than in the quantum wells.Keywords
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