Silicon-silicon interfaces
- 15 January 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (2) , 163-165
- https://doi.org/10.1063/1.93029
Abstract
A wide variety of measurements on silicon grain boundaries shows that the electronic properties of such boundaries are much like those of Si surfaces in all essential respects. Moreover, the properties of ’’clean’’ surfaces and lightly contaminated surfaces can be studied on many crystallographic orientations of the interfaces without the need for vacuum measurements. Such grain boundaries may therefore be regarded as Si-Si interfaces in the sense used in surface physics. It is shown that the thermal history and the dissolved oxygen of the silicon play major roles in determining the interface properties.Keywords
This publication has 10 references indexed in Scilit:
- Buckling Reconstruction on Laser-Annealed Si(111) SurfacesPhysical Review Letters, 1981
- Selective observation of electrically active grain boundaries in siliconApplied Physics Letters, 1981
- A new intrinsic gettering technique using microdefects in Czochralski silicon crystal: A new double preannealing techniqueApplied Physics Letters, 1980
- Evidence for the segregation of impurities to grain boundaries in multigrained silicon using Auger electron spectroscopy and secondary ion mass spectroscopyApplied Physics Letters, 1980
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface StatesPhysical Review Letters, 1980
- Determination of surface states on Si(111) by surface photovoltage spectroscopyPhysical Review B, 1980
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979
- Photoemission studies of intrinsic surface states on Si(100)Journal of Vacuum Science and Technology, 1979
- The Generalized Path Variable MethodJournal of the Physics Society Japan, 1963
- Grain Boundary Barriers in GermaniumPhysical Review B, 1952