Heteroepitaxy of Layered Semiconductor GaSe on a GaAs(111)B Surface

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Abstract
Growth of a III-VI compound semiconductor GaSe on a GaAs(111)B substrate has been tried by the molecular beam epitaxy technique. Although GaSe and GaAs have completely different lattice structures, it has been found that a good GaSe film having its own lattice constant grows with its c-axis normal to the GaAs substrate surface. The growth proceeds via van der Waals-like weak forces between each layer of GaSe, relaxing the lattice-matching condition drastically. The heteroepitaxial growth of GaSe will be applied to effective surface passivation of GaAs.