Combined Low-Energy Electron Diffraction and Auger Electron Spectroscopy Studies of Si, Ge, GaAs, and InSb Surfaces

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Abstract
In the absence of surface impurities detectable by Auger electron spectroscopy, several semiconductor surfaces studied showed surface rearrangement using low-energy electron diffraction. The structures observed are Si{111}2×1 and 7×7, Ge{111}2×1 and 2×8, GaAs{111}2×2, InSb{111}2×2, InSb {111¯} 3×3, and InSb{112}1×1. The Auger electron spectra for some of these surfaces are also presented.

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