Stable and metastable (Al,Ga)As/(In,Ga)As n-channel strained quantum well field-effect transistors

Publisher Website

6 January 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/gaas.1988.11069

Abstract

No abstract available

Keywords

This publication has 0 references indexed in Scilit: