Detection of SiH(X 2Π) fundamental and hot band transitions by diode laser absorption spectroscopy
- 1 September 1985
- journal article
- research article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 83 (5) , 2060-2063
- https://doi.org/10.1063/1.449347
Abstract
Infrared absorption spectra of the SiH free radical have been detected in a silane plasma discharge. In addition to fundamental band transitions some hot band lines have been identified from predictions derived from optical and FTIR data. Low Q‐branch transitions in both 2Π1/2 and 2Π3/2 states of the fundamental have been accurately measured and incorporated in a new set of predictions based on the present work and earlier FTIR data.Keywords
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