A theory of voltage breakdown of cylindrical P-N junctions, with applications
- 1 January 1957
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Electron Devices
- Vol. 4 (1) , 15-16
- https://doi.org/10.1109/t-ed.1957.14194
Abstract
In certain p-n junctions, such as those made by the alloy method, edges on the junction surface will, by field concentration, lead to lower inverse breakdown voltages than would otherwise be obtained. These edges are approximated by pieces of circular cylinders, and a formula for the voltage breakdown of a circular cylindrical junction obtained. The results agree qualitatively with those found for certain alloy-type diodes.Keywords
This publication has 3 references indexed in Scilit:
- "Design theory and experiments for abrupt hemispherical p-n junction diodes"IRE Transactions on Electron Devices, 1956
- Some Experiments on, and a Theory of, Surface BreakdownJournal of Applied Physics, 1956
- Avalanche Breakdown in GermaniumPhysical Review B, 1955