Growth of 1.3 μm InAsP/InGaAsP laser structures by gas source molecular beam epitaxy
- 18 December 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (25) , 3676-3678
- https://doi.org/10.1063/1.114924
Abstract
The optimization of growth conditions for high quality 1.3 μm InAsP/InGaAsP laser structures by gas source molecular beam epitaxy is reported. Measurements of photoluminescence intensity and threshold currents of highly strained InAsP/InGaAsP multiple quantum well (MQW) lasers indicate an optimum growth temperature substantially lower than that for conventional 1.3 μm InGaAsP quaternary lasers. Broad-area laser structures grown under the optimum conditions exhibited threshold current densities as low as 400 A/cm2. Buried heterostructures with uncoated facets exhibited threshold currents as low as 5.0 mA and internal losses of 8.0 cm−1.Keywords
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