Resistance associated with FET gate metallization

1 August 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 1 (8) , 151-153
https://doi.org/10.1109/EDL.1980.25269

Abstract

The resistance of the metallization of a FET gate stripe has the effect of placing a non-linear resistance R(I) in series with the gate junction. A simple means of calculating R(I) is developed, and a curve of the drop across R(1) at milliampere forward biases is given.

Keywords

FETS
METALLIZATION
EQUATIONS
VOLTAGE
ITERATIVE ALGORITHMS
CURRENT MEASUREMENT
ELECTRICAL RESISTANCE MEASUREMENT
CONVERGENCE
DIODES

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