The use of GaAs—(Ga, Al)As heterostructures for FET devices
- 1 June 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (6) , 1141-1147
- https://doi.org/10.1109/t-ed.1980.19997
Abstract
The metalorganic VPE process has been applied to the growth of GaAs-GaAlAs heterostructures suitable for FET devices. Two kinds of materials are examined; namely, insulating GaAlAs hetero-buffer and heterojunction p-GaAlAs-n-GaAs, The technology of device processing uses selective etching and self-alignment techniques. The heterobuffered FET's demonstrate effective electron confinement and the heterojunction HJFET's exhibit a built-in voltage of 1.4 eV. However, more has to be known on the transition at the heterointerface to improve the device performances.Keywords
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