Far-infrared s→p ± interexciton transitions in InGaAs/GaAs coupled double quantum wells
- 1 August 1996
- journal article
- Published by Pleiades Publishing Ltd in JETP Letters
- Vol. 64 (3) , 213-218
- https://doi.org/10.1134/1.567177
Abstract
We consider s→p± interexciton far-infrared (FIR) magnetooptical transitions in coupled double quantum wells (DQWs). Spatially direct (intrawell) and indirect (interwell) excitons in strained InxGa1−x As/GaAs symmetric DQWs with a simple valence band are considered. The evolution of the transition energies and oscillator strengths as functions of the transverse magnetic field B in different regimes is studied: we consider the direct regime (zero and low transverse electric field ℰ), the indirect regime (high ℰ), and the indirect-direct crossover (induced by increasing B at intermediate ℰ).Keywords
This publication has 6 references indexed in Scilit:
- Intrawell and interwell magnetoexcitons in As/GaAs coupled double quantum wellsPhysical Review B, 1996
- Direct and indirect magnetoexcitons in symmetric As/GaAs coupled quantum wellsPhysical Review B, 1995
- centers in quantum wells: Spin-singlet and spin-triplet magneto-optical transitionsPhysical Review B, 1993
- Indirect-to-direct crossover of laterally confined excitons in coupled quantum wellsPhysical Review B, 1992
- Exciton states in coupled double quantum wells in a static electric fieldPhysical Review B, 1991
- Cyclotron Resonance and de Haas-van Alphen Oscillations of an Interacting Electron GasPhysical Review B, 1961