Submicron SOI-MOSFETs for high temperature operation (300–600K)
- 30 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4) , 359-362
- https://doi.org/10.1016/s0167-9317(97)00079-8
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Demonstration of the potential of accumulation-mode MOS transistors on SOI substrates for high-temperature operation (150-300 degrees C)IEEE Electron Device Letters, 1993