Growth of AlN $(11\bar{2}0)$ on 6H-SiC $(11\bar{2}0)$ by Molecular-Beam Epitaxy

• 1 December 2002
• journal article
• Published by IOP Publishing in Japanese Journal of Applied Physics
• Vol. 41  (Part 2, No) , L1348-L1350
• https://doi.org/10.1143/jjap.41.l1348

Abstract

Keywords

• MOLECULAR BEAM EPITAXY
• GROWTH
• BAR
• ALN
• 6H SIC