Interface-state parameter determination by deep-level transient spectroscopy
- 15 March 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (6) , 462-464
- https://doi.org/10.1063/1.91507
Abstract
A modification of the deep‐level transient spectroscopy (DLTS) technique for determination of interface‐state parameters is described. In this technique, the surface potential dependence of the interface‐state emission signal in a MOS capacitor was used to determine the energy of the emitting states. The technique allows accurate determination of majority‐carrier cross section and interface‐state density as functions of energy in the gap. Experimental results are presented for n‐ and p‐type MOS capacitors on n 〈100〉 silicon.Keywords
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