Microwave Observations of Carrier Behaviors in “Oscillistors”

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Abstract
Observations of carrier behaviors in germanium “oscillistors” by means of 24Gc microwave reflection have revealed that the observed oscillations in current and voltage are accompanied by carrier density waves which propagate and rotate in certain directions, as Glicksman had predicted. Observed directions of propagation and rotation agree with his prediction inptype and intrinsic samples, but not inntype ones. It is shown that the difference between hole and electron densities in semiconductor is responsible for this disagreement, and his calculation is modified so as to be applicable to semiconductor plasma. It has also been found that the total carrier number at a given cross section also oscillates. The ac current and voltage hitherto observed are ascribed to this carrier number oscillation. Deviations from circular symmetry are shown, on the basis of a qualitative discussion, to account for this oscillation.