A new approach to calculating the energy of systems of misfit dislocations in strained epitaxial layers
- 5 July 1993
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 5 (27) , 4595-4600
- https://doi.org/10.1088/0953-8984/5/27/004
Abstract
A new method for calculating the stored elastic energy of epitaxial strained layers containing misfit interfacial dislocations is presented. The method differs from previous approaches in that it explicitly takes into account all dislocation-dislocation interactions and interactions between dislocations and the mismatch stress. The method is unique in that it can be used to calculate the energy of finite and/or irregularly spaced systems of dislocations. Examples are given comparing the energy per unit area of finite and non-uniform systems of dislocations calculated using the present approach with that calculated for the infinite uniform case.Keywords
This publication has 9 references indexed in Scilit:
- Energy of arrays of nonperiodic interacting dislocations in semiconductor strained epilayers: Implications for strain relaxationJournal of Applied Physics, 1993
- The energy of finite systems of misfit dislocations in epitaxial strained layersJournal of Applied Physics, 1992
- Stable configurations in strained epitaxial layersPhilosophical Magazine A, 1992
- Energetics of misfit- and threading-dislocation arrays in heteroepitaxial filmsPhysical Review B, 1991
- Misfit dislocation generation in epitaxial layersCritical Reviews in Solid State and Materials Sciences, 1991
- The energy of an array of dislocations: Implications for strain relaxation in semiconductor heterostructuresPhilosophical Magazine A, 1990
- Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areasApplied Physics Letters, 1990
- Defects in epitaxial multilayers I. Misfit dislocationsJournal of Crystal Growth, 1974
- Structure of epitaxial crystal interfacesSurface Science, 1972