Optimization of GaAs power MESFET device and material parameters for 15-GHz operation
- 1 February 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (2) , 467-471
- https://doi.org/10.1109/T-ED.1980.19885
Abstract
The results of recent 15-GHz measurements on GaAs power FET's are described. The microwave performance has been determined as a function of epitaxial doping level and thickness, gate recess depth, gate finger width, and source-drain spacing. The optimum values of these parameters for 15-GHz operation are epitaxial doping level approximately 1.6 × 1017cm-3, saturated drain current with zero gate voltage in the range 330- to 400-mA/mm gatewidth, gate recess depth between 500 and 1000 Å, gate finger width ≤ 150 µm, and source-drain spacing approximately 5 µm.Keywords
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