X-band monolithic power amplifier using low characteristic impedance thin-film microstrip transformers
- 1 August 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 2 (8) , 328-330
- https://doi.org/10.1109/75.153603
Abstract
A technique is introduced for matching monolithic power amplifiers by using short thin-film microstrip transformers with very low characteristic impedance. An X-band power FET amplifier has been successfully realized with this technique, using a standard GaAs foundry, two-level metal process. The amplifier has achieved over 5.5-dB small-signal gain and an output power of 1 W at a center frequency of 11.3 GHz. This matching technique can greatly reduce the area of the matching networks compared with conventional microstrip techniques which rely on cluster matching and power dividing/combining.Keywords
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