Stabilities of single-layer and bilayer steps on Si(001) surfaces
- 12 October 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 59 (15) , 1691-1694
- https://doi.org/10.1103/physrevlett.59.1691
Abstract
The formation energies of single- and double-layer steps on Si(001) surfaces were calculated. For each case, two configurations with surface dimerization axes normal or parallel to the step edge were examined. Single-layer steps are found to have the lowest formation energy. Bilayer steps become energetically more favorable on surfaces misoriented towards [110] or [1¯10] axes where low- and high-energy single-layer steps are forced to alternate with each other.Keywords
This publication has 15 references indexed in Scilit:
- Determination of terrace size and edge roughness in vicinal Si{100} surfaces by surface-sensitive diffractionJournal of Applied Physics, 1987
- Biatomic Layer-High Steps on Si(001)2×1 SurfaceJapanese Journal of Applied Physics, 1987
- Biatomic Steps on (001) Silicon SurfacesPhysical Review Letters, 1986
- Surface bands for single-domain 2 × 1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystalsPhysical Review B, 1986
- Si(001)-2×1 Single-Domain Structure Obtained by High Temperature AnnealingJapanese Journal of Applied Physics, 1986
- GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxyApplied Physics Letters, 1985
- Surface Infrared Study of Si(100)-(2×1)HPhysical Review Letters, 1984
- LEED studies of clean high Miller index surfaces of siliconSurface Science, 1981
- LEED study of the stepped surface of vicinal Si (100)Surface Science, 1980
- Structural and Electronic Properties of Stepped Semiconductor SurfacesJapanese Journal of Applied Physics, 1974