Substrate temperature limits for epitaxy of InP by MBE
- 15 October 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (8) , 617-620
- https://doi.org/10.1063/1.91228
Abstract
The temperature range within which epitaxial unintentionally doped InP can be deposited from In and P2 beams by MBE on to (100) InP substrates has been determined to be 100–405 °C. Above 410 °C whisker growth from In droplets via a vapor‐liquid‐solid process occurs; below 95 °C polycrystalline layers result on account of the nondissociation of P2.Keywords
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