AlGaAs/GaAs melt-etched inner stripe laser diode with self-aligned structure
- 1 June 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (11) , 1023-1025
- https://doi.org/10.1063/1.95798
Abstract
A novel liquid phase epitaxy (LPE) used to fabricate a channeled stripe AlGaAs/GaAs laser diode emitting at 780 nm with a self-aligned structure is reported. In the present method, only two-step LPE and a conventional wet chemical etching are required. The inner stripe, 4 μm wide, is grooved by a newly developed preferential melt-etching technique during crystal growth without exposure of the wafer to air. A maximum cw power output of 28 mW per facet without facet coatings and a threshold current of 50 mA are accomplished. Fundamental transverse mode operation up to 10 mW and single longitudinal mode above 2.5 mW are demonstrated.Keywords
This publication has 4 references indexed in Scilit:
- A high-power, single-mode laser with twin-ridge-substrate structureApplied Physics Letters, 1983
- Visible GaAlAs V-channeled substrate inner stripe laser with stabilized mode using p-GaAs substrateApplied Physics Letters, 1982
- Single-longitudinal-mode metalorganic chemical-vapor-deposition self-aligned GaAlAs-GaAs double-heterostructure lasersApplied Physics Letters, 1980
- Transverse-mode stabilized Ga_1−xAlxAs visible diode lasersApplied Optics, 1979