Chemical etching of sapphire
- 1 January 1982
- journal article
- book review
- Published by Wiley in Crystal Research and Technology
- Vol. 17 (3) , 365-371
- https://doi.org/10.1002/crat.2170170320
Abstract
The results on etching of sapphire substrates with different orientation are discussed. High temperature etching in hydrogen stream and etching in the mixture of H3PO4 and H2SO4 were used in experiments. The relation of etching rates for different sapphire orientations were established in both cases. The conditions of nonselective etching were determined.Keywords
This publication has 3 references indexed in Scilit:
- Dislocation Etch Pit Formation on Cadmium CrystalJapanese Journal of Applied Physics, 1973
- Dislocation Loops in Surface Layer of Cadmium CrystalsJapanese Journal of Applied Physics, 1971
- Etch Pits at Dislocation Sites on Cadmium CrystalsJapanese Journal of Applied Physics, 1970