Laser‐Induced Photoelectrochemical Transients at a Dye Solution/Semiconductor Interface: Presence of a Slow Photosensitized Process

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Abstract
The measurements of pulsed laser induced open‐circuit photopotentials at B‐hydroquinone solution interfaces, allow one to detect local inhomogeneities of the polycrystalline tin oxide film. Depending on the irradiated spots, a slow charging process of the semiconductor capacitance is either observed, or not, during a few milliseconds after the laser flash, in the presence of high hydroquinone concentrations. This slow process can also be generated homogeneously on the surface by an anodic polarization of the electrode. From the kinetic behavior of these open‐circuit photopotentials as a function of various parameters, a model for this slow photosensitized electron injection is proposed and discussed on the basis of other data in the literature.

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