Improved dielectrically isolated device integration by silicon-wafer direct bonding(SDB) technique
- 1 January 1986
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 210-213
- https://doi.org/10.1109/iedm.1986.191151
Abstract
An improved Dielectric Isolation (DI) technique, involving a novel Silicon-wafer Direct Bonding(SDB) method was investigated, including the SDB key processes and thermographic SDB wafer evaluation technique. In order to study the novel DI technique application feasibility, a series connected 23 photo-diode array was fabricated. All of the results showed attractive features for use in overcoming conventional DI technique limitations for high voltage, high current device integration.This publication has 0 references indexed in Scilit: