Ga x In 1− x As y P 1− y /InP d.h. laser emitting at 1.15 μm grown by low-pressure metalorganic c.v.d.

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Abstract
We report the first successful operation of a GaxIn1−xAsy P1−y/InP double heterostructure laser grown by low-pressure metalorganic chemical vapour deposition. This broad-area contact laser, emitting at 1.15 μm, has a threshold current density of 5.9 kA/cm2 at room temperature. The efficiency of photoluminescence and electroluminescence below laser threshold is comparable to that measured in structures grown by liquid-phase epitaxy.