Multilayer bipolar field-effect transistors
- 11 February 2008
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 92 (6) , 063505
- https://doi.org/10.1063/1.2816913
Abstract
Field-effect transistors comprising a layer of regioregular poly(3-hexylthiophene) (rr-P3HT) separated from a parallel layer of the soluble fullerene,[6,6]-phenyl C 61 -butyric acid methyl ester (PCBM) by a layer of titanium suboxide ( Ti O x ) , are fabricated by solution processing. Because the Ti O x is an electron transporting material and a hole blocking material, this multilayer architecture operates either in the p -channel mode with holes in the rr-P3HT layer or in the n -channel mode with electrons in the PCBM layer.Keywords
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