Intrinsic gate delay of GaAs/AlGaAs single and double heterostructure I ² L circuits

• 2 July 1992
• journal article
• Published by Institution of Engineering and Technology (IET) in Electronics Letters
• Vol. 28  (14) , 1309-1311
• https://doi.org/10.1049/el:19920832

Abstract

Keywords

• DOUBLE HETEROSTRUCTURE I2L CIRCUITS
• SINGLE HETEROJUNCTION BIPOLAR TRANSISTOR
• GAAS-ALGAAS
• MINIMUM GATE DELAY
• HBT
• LOGIC IC
• SCHOTTKY COUPLED
• ANALYTICAL MODEL
• BASE DOPING LEVEL