1 µm MOSFET VLSI technology: Part II—Device designs and characteristics for high-performance logic applications

1 April 1979

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 26 (4) , 325-333
https://doi.org/10.1109/T-ED.1979.19431

Abstract

Micrometer-dimension n-channel silicon-gate MOSFET's optimized for high-performance logic applications have been designed and characterized for both room-temperature and liquid-nitrogen-temperature operation. Appropriate choices of design parameters are shown to give proper device thresholds which are reasonably independent of channel length and width. Depletion-type devices are characterized at room temperature for load device use. Logic performance capability is demonstrated by test results on NOR circuits for representative fan-out and loading conditions. Unloaded ring oscillators achieved switching delays down to 240 ps at room temperature and down to 100 ps at liquid nitrogen temperature.

Keywords

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