Diffusion effects in one-carrier space-charge-limited currents with trapping
- 1 June 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (6) , 2787-2788
- https://doi.org/10.1063/1.1663671
Abstract
The one‐carrier injection current‐voltage characteristics for insulators having two equal metal contacts and containing traps are computed, together with the free‐carrier zero‐bias spatial distributions, for extrinsic semiconductors. It is shown that the overlap of the contacts may give rise to trap‐filled‐limit characteristics governed by a power law. The steepness of these characteristics proves to be less than that predicted by Lampert and Edelman. The shallow‐trap square‐law characteristic may be entirely replaced by an overlap‐determined Ohm's law characteristic. The overlap sometimes fails to be removed through impurity conduction.This publication has 5 references indexed in Scilit:
- Theory of metallic contacts on high resistivity solids—I. Shallow trapsJournal of Physics and Chemistry of Solids, 1971
- Theory of metallic contacts on high resistivity solids (II) deep trapsJournal of Physics and Chemistry of Solids, 1971
- Space charge injection into impurity semiconductors—IIJournal of Physics and Chemistry of Solids, 1964
- Theory of One-Carrier, Space-Charge-Limited Currents Including Diffusion and TrappingJournal of Applied Physics, 1964
- Simplified Theory of Space-Charge-Limited Currents in an Insulator with TrapsPhysical Review B, 1956