Current oscillations in semiconductor diodes under streaming instability conditions

1 September 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (18) , 733-734
https://doi.org/10.1049/el:19830499

Abstract

The current oscillations with frequency of the order of plasma frequency in the submicron GaAs n⁺-n-p-p⁺ structure are obtained by Monte Carlo particle simulation. The streaming plasma instability responsible for the current oscillations at near ballistic transport conditions is shown.

Keywords

SEMICONDUCTOR DIODES
ELECTRICAL CONDUCTIVITY
STREAMING PLASMA INSTABILITY
PLASMA FREQUENCY
MONTE CARLO PARTICLE SIMULATION
NEAR BALLISTIC TRANSPORT CONDITIONS
III-V SEMICONDUCTORS
SUBMICRON GAAS N+-N-P-P+ STRUCTURE
CURRENT OSCILLATIONS

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