Rapid Large Area Annealing of Ion-Implanted Si With Incoherent Light
- 1 January 1981
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Activation of arsenic-implanted silicon using an incoherent light sourceApplied Physics Letters, 1981
- Heat-pulse annealing of arsenic-implanted silicon with a CW arc lampIEEE Electron Device Letters, 1981
- Radiation Annealing of Boron-Implanted Silicon with a Halogen LampJapanese Journal of Applied Physics, 1980
- Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiationApplied Physics Letters, 1978
- Migration on fine molten wires in thin silicon wafersJournal of Applied Physics, 1978
- Physical and electrical properties of laser-annealed ion-implanted siliconApplied Physics Letters, 1978