Activation of low dose silicon implants in GaAs by multiply scanned electron beams
- 22 May 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (11) , 433-434
- https://doi.org/10.1049/el:19800302
Abstract
Low dose implants of Si+ into semi-insulating GaAs have been annealed with the multiply scanned electron beam processing system. The activation of ions was about 55%, with a high peak concentration and a carrier mobility of 3800 cm2/Vs. The samples were unencapsulated and showed no surface degradation after annealing.Keywords
This publication has 1 reference indexed in Scilit:
- Pulsed annealing of implanted semi-insulating GaAsAIP Conference Proceedings, 1979